symbol v ds v gs i dm i ar e ar t j , t stg symbol typ max 19.6 25 50 60 r jc 1 1.5 2.1 w t a =70c 1.3 w junction and storage temperature range a p d c 100 50 -55 to 175 t c =100c i d continuous drain current b, h maximum units parameter t c =25c t c =100c 30 maximum junction-to-ambient a steady-state 65 65 80 avalanche current c 38 power dissipation a t a =25c p dsm c/w absolute maximum ratings t c =25c unless otherwise noted v v 12 pulsed drain current c power dissipation b t c =25c gate-source voltage drain-source voltage maximum junction-to-case d steady-state c/w thermal characteristics parameter units maximum junction-to-ambient a t 10s r ja c/w a repetitive avalanche energy l=0.3mh c 217 mj a t a =70c 12 continuous drain current a t a =25c i dsm 16 AOL1712 v ds (v) = 30v i d =65a (v gs = 10v) r ds(on) < 4.2m (v gs = 10v) r ds(on) < 5.5m (v gs = 4.5v) srfet tm AOL1712 uses advanced trench technology with a monolithically integrated schottky diode to provide excellent r ds(on) ,and low gate charge. this device is suitable for use as a low side fet in smps, load switching and general purpose applications. ultra so-8 tm top view bottom tab connected to drain s g d d s g srfet tm s oft r ecovery mos fet : integrated schottky diode www.freescale.net.cn 1/6 n-channel enhancement mode field effect transistor general description features
symbol min typ max units bv dss 30 v v ds =30v, v gs =0v 0.1 t j =125c 20 i gss 100 na v gs(th) gate threshold voltage 1.4 1.8 2.5 v i d(on) 80 a 3.5 4.2 t j =125c 5.5 6.6 4.4 5.5 g fs 90 s v sd 0.36 0.5 v i s 65 a c iss 3940 5120 pf c oss 590 pf c rss 255 pf r g 0.72 1.1 q g (10v) 73 95 nc q g (4.5v) 35 nc q gs 10.4 nc q gd 12.4 nc t d(on) 9.8 ns t r 8.4 ns t d(off) 45 ns t f 10 ns t rr 36 43 ns q rr 32 nc gate source charge gate resistance v gs =0v, v ds =0v, f=1mhz turn-off delaytime v gs =10v, v ds =15v, r l =0.75 , r gen =3 turn-off fall time turn-on delaytime v gs =4.5v, i d =20a i s =1a,v gs =0v v ds =5v, i d =20a turn-on rise time total gate charge v gs =10v, v ds =15v, i d =20a gate drain charge v gs =0v, v ds =15v, f=1mhz switching parameters total gate charge m maximum body-diode + schottky diode continuous current h input capacitance output capacitance dynamic parameters r ds(on) static drain-source on-resistance forward transconductance diode forward voltage v ds =v gs i d =250 a electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss zero gate voltage drain current ma v ds =0v, v gs = 12v gate-body leakage current body diode reverse recovery time body diode reverse recovery charge i f =20a, di/dt=300a/ s drain-source breakdown voltage on state drain current i d =250 a, v gs =0v v gs =10v, v ds =5v v gs =10v, i d =20a reverse transfer capacitance i f =20a, di/dt=300a/ s a: the value of r ja is measured with the device in a still air environment with t a =25c. the power dissipation p dsm and current rating i dsm are based on t j(max) =150c, using steady state junction-to-ambient thermal resistance. b. the power dissipation p d is based on t j(max) =175c, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. c: repetitive rating, pulse width limited by junction temperature t j(max) =175c. d. the r ja is the sum of the thermal impedence from junction to case r jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300us pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =175c. the soa curve provides a single pulse rating. g. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. h. the maximum current rating is limited by bond-wires. * this device is guaranteed green after date code 8p11 (june 1 st 2008) rev3: july. 2008 www.freescale.net.cn 2/6 AOL1712 n-channel enhancement mode field effect transistor
typical electrical and thermal characteristics 0 20 40 60 80 0 0.5 1 1.5 2 2.5 3 v ds (volts) figure 1: on-region characteristics i d (a) 3.5v v gs =3.0v 10v 4.5v 0 20 40 60 80 100 1 1.5 2 2.5 3 3.5 4 v gs (volts) figure 2: transfer characteristics i d (a) 3 3.5 4 4.5 5 0 5 10 15 20 25 30 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ) 0.001 0.01 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c 0.7 0.9 1.1 1.3 1.5 1.7 1.9 -40 -15 10 35 60 85 110 135 160 185 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance i d =20a v gs =10v v gs =4.5v 2 4 6 8 10 12 2 4 6 8 10 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ) 25c 125c v ds =5v v gs =4.5v v gs =10v i d =20a 25c 125c www.freescale.net.cn 3/6 AOL1712 n-channel enhancement mode field effect transistor
typical electrical and thermal characteristics 1.0 10.0 100.0 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note f) 100 s 10ms 1ms dc r ds(on) limited t j(max) =175c t c =25c 100ms 0 2 4 6 8 10 0 10 20 30 40 50 60 70 80 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 1000 2000 3000 4000 5000 6000 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics capacitance (nf) c iss 10 100 1000 10000 0.0001 0.001 0.01 0.1 1 pulse width (s) figure 10: single pulse power rating junction-to- case (note f) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) figure 11: normalized maximum transient thermal impedance (note f) z jc normalized transient thermal resistance c oss c rss v ds =15v i d =20a single pulse d=t on /t t j,pk =t c +p dm .z jc .r jc r jc =1.5c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =175c t c =25c www.freescale.net.cn 4/6 AOL1712 n-channel enhancement mode field effect transistor
typical electrical and thermal characteristics 20 40 60 80 100 1.0e-06 1.0e-05 1.0e-04 1.0e-03 time in avalanche, t a (s) figure 12: single pulse avalanche capability i d (a), peak avalanche current 0 20 40 60 80 100 120 0 25 50 75 100 125 150 175 t case (c) figure 13: power de-rating (note b) power dissipation (w) t c =25c 0 20 40 60 80 0 25 50 75 100 125 150 175 t case (c) figure 14: current de-rating (note b) current rating i d (a) 0 20 40 60 80 100 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure15: single pulse power rating junction-to- ambient (note g) power (w) 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 16: normalized maximum transient thermal impedance (note g) z ja normalized transient thermal resistance d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =60c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse d=t on /t t j,pk =t c +p dm .z jc .r jc r ja =60c/w t j(max ) =150c t a =25c www.freescale.net.cn 5/6 AOL1712 n-channel enhancement mode field effect transistor
vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt t rr ar ar - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off www.freescale.net.cn 6/6 AOL1712 n-channel enhancement mode field effect transistor
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